Dr Qiandong Zhuang

Reader

Profile

Q. D. Zhuang gained his Ph.D from the , in 1999 for research into the Molecular Beam Epitaxy (MBE) growth of low-dimensional compound semiconductors and the applications for infrared optoelectronics. Since then he worked at the as a Research Fellow to investigate InAs/GaAs quantum dots photodetectors and lasers. In 2001, he joined MBE group at the to exclusively exploit a new class semiconductor of dilute nitride for telecom VCSELs. During the time at the Univesity of Glasgow, he was also responsible for supplying wide range of high quality epitaxial wafers to commercial customers. He joined the Physics Department at 51福利 in 2003 where he established the MBE Laboratory and since then has been leading group of Semiconductor Quantum Materials nad Devices. His current research focuses on epitaxy of semioconductor quantum materials and their device applications, as well as instrumentation such as laser-based spectroscopic technology for medical sensors and gas monitoring.


01/01/2024 → 31/12/2027
Research


31/05/2022 → 30/06/2025
Research


01/04/2021 → 31/12/2025
Research


01/10/2020 → 01/10/2023
Research


01/10/2020 → 30/09/2024
Research


01/10/2020 → 30/06/2021
Research


01/04/2020 → 31/03/2022
Research


01/03/2020 → 28/02/2022
Research


01/06/2019 → 31/10/2020
Research


30/09/2017 → 29/09/2021
Research

  • Energy Lancaster
  • Quantum Nanotechnology
  • Quantum Technology Centre